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Abstract
In this work, there are some changes carried out in the conventional LDMOS using silicon material known as MOS1 by utilizing trench in addition dual gate and drain architecture known as MOS2. The gate electrode is placed in SiO2 (oxide) trenches which are located in the epi-layer at nearbyof the drain. The drain contact is positioned at the centre and topmostof the architecture. However, the sources are located at the edges of the architecture. In the proposed MOS2, twogatescreating the dual-channels. These channels acts simultaneously so give emphasis togain, drive current, resistance,and threshold voltage essential for the power ICs of the proposed structure (MOS2).A slight enlargement in breakdown occurs due to the mechanism of RESURF in MOS2. This RESURF mechanism happened with consideration of dual trenches of SiO2. With the help of 2-D simulator the performance and characteristics are analysed, and compare the results of the trench-LDMOS (MOS2) with that of the planer MOS (MOS1). The trench architecture(MOS2) gives 13% decrease the threshold-voltage, 2.18 times higher output current, 1.34 times enhancement in breakdown voltage, and111% enhancement in gain (gm)in comparison with the planer MOSFET.