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Abstract
CMOS is used as major switching element in most of the VLSI circuits but its performance is limited by short channel effects due to scaling of FETs like higher subthreshold (SS), reduced Ion/Ioff, drain induced barrier lowering (DIBL), surface scattering etc. which hampers the performance in nanometer regime. Researchers are now looking for the possibility to choose an alternative device with better electronic and mechanical properties, compact size and lesser power consumption. Going from bigger transistors to smaller ones, these short channel effects come into picture. To settle the tradeoff between these two things, different channel alternatives are being introduced like Carbon Nano Tube FET, Carbon Nano Wire FET, Tunnel FET, Ferroelectric FET and Negative Capacitance FET and many more. Scope is to reduce short channel effects by choosing an ultra-thin body and operate the device under sub-60 mV/decade to reduce power consumption. This paper explains different alternatives of MOSFETs and their control over various parameters to enhance the performance and scaling of FETs.